Select Publications

Wu, F.; Saha, S.; Harper, B. J.; Marsh, D.; Keszler, D. A.; Maddux, B. L. S.; Harper, S. L., Monoalkyl tin cluster films: High-resolution patterning materials with low environmental impact under simulated natural conditions. 2017, in preparation.

Perkins, C. K.; Eitrheim, E. S.; Fulton, B. L.; Fullmer, L. B.; Colla, C. A.; Park, D.-H.; Oliveri, A. F.; Hutchison, J. E.; Nyman, M.; Casey, W. H.; et al. Synthesis of an Aluminum Hydroxide Octamer through a Simple Dissolution Method. Angew. Chemie Int. Ed. 2017,

Heo, J.; Yu, L.; Altschul, E.; Waters, B.E.; Wager, J.F.; Zunger, A.; Keszler, D.A. CuTaS3: Intermetal d–d Transitions Enable High Solar Absorption. Chem. Mater. 2017,

Perkins, C. K.; Mansergh, R. H.; Ramos, J. C.; Nanayakkara, C. E.; Park, D.-H.; Goberna-Ferrón, S.; Fullmer, L. B.; Arens, J. T.; Gutierrez-Higgins, M. T.; Jones, Y. R.; et al. Low-Index, Smooth Al2O3 Films by Aqueous Solution Process. Opt. Mater. Express 2017,

Mansergh, R. H.; Fullmer, L. B.; Park, D.-H.; Nyman, M.; Keszler, D. A. Reaction Pathway: Aqueous Hexatantalate Clusters to High-Density Tantalum Oxide Nanofilms. Chem. Mater. 2016,

Goberna-Ferrón, S.; Park, D.-H.; Amador, J. A.; Keszler, D. A.; Nyman, M. Amphoteric Aqueous Hafnium Cluster Chemistry. Angew. Chem. Int. Ed. 2016,

Perkins, C. K.; Mansergh, R. H.; Park, D.-H.; Nanayakkara, C. E.; Ramos, J. C.; Decker, S. R.; Huang, Y.; Chabal, Y. J.; Keszler, D. A. Aqueous Process to Limit Hydration of Thin-Film Inorganic Oxides. Solid State Sci. 2016,

Murari N. M.; Mansergh, R. H.; Huang, Y.; Kast, M. G.; Keszler, D. A.; Conley, J. F., Aerosol Jet Fog (ajFOG) Deposition of Aluminum Oxide Phosphate Thin Films from an Aqueous Fog. J. Mater. Res. 2016,

Fullmer, L. B.; Mansergh, R. H.; Zakharov, L. N.; Keszler, D. A.; Nyman, M. Nb2O5 and Ta2O5 Thin Films from Polyoxometalate Precursors: A Single Proton Makes a Difference. Cryst. Growth Des. 2015,

Son, J.-H.; Park, D.-H.; Keszler, D. A.; Casey, W. H., Acid-Stable Peroxoniobophosphate Clusters To Make Patterned Films. Chem. Eur. J. 2015

Heo, J.; Ravichandran, R.; Reidy, C.; Tate, J.; Wager, J. F.; Keszler D. A., Design Meets Nature: New Tetrahedrite Solar Absorbers, Adv. Energy Mater. 2014,

Heo, J.; Laurita, G.; Muir, S.; M. A. Subramanian, M. A.; Keszler, D. A., Enhanced Thermoelectric Performance of Synthetic Tetrahedrites, Chem. Mater. 201426, 2047.

Amador, J. M.; Decker, S. R.; Lucchini, S. E.; Ruther, R. E.; Keszler, D. A. In Patterning chemistry of HafSOx resist, Advances in Patterning Materials and Processes XXXI, San Jose, CA, March 27, 2014; Wallow, T. I.; Hohle, C. K., Eds. San Jose, CA, 2014; pp 90511A-90511A-90516.

Knutson, C. C.; Jackson, M. N.; Beekman, M.; Carnes, M. E.; Johnson, D. W.; Johnson, D. C.; Keszler, D. A., Mentoring Graduate Students in Research and Teaching by Utilizing Research as a Template. Journal of Chemical Education 2014, 91, 200-205.

Muir, S. W.; Cowell, E. W.; Wang, W.; Wager, J. F.; Keszler, D. A., Effects of Oxygen Incorporation on the Physical Properties of Amorphous Metal Thin Films. The Journal of Physical Chemistry C 2014, 118, 9647-9651.

Oleksak, R. P.; Ruther, R. E.; Luo, F.; Fairley, K. C.; Decker, S. R.; Stickle, W. F.; Johnson, D. W.; Garfunkel, E. L.; Herman, G. S.; Keszler, D. A., Chemical and Structural Investigation of High-Resolution Patterning with HafSOx. ACS Applied Materials & Interfaces 2014, 6, 2917-2921.

Smith, S. W.; Wang, W.; Keszler, D. A.; Conley, J. F., Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2014, 32, 041501.

Wager, J. F.; Yeh, B.; Hoffman, R. L.; Keszler, D. A., An amorphous oxide semiconductor thin-film transistor route to oxide electronics. Current Opinion in Solid State and Materials Science 2014, 18, 53-61.

Anderson, M. D.; Heideman, C. L.; Lin, Q.; Smeller, M.; Kokenyesi, R.; Herzing, A. A.; Anderson, I. M.; Keszler, D. A.; Zschack, P.; Johnson, D. C., Size-Dependent Structural Distortions in One-Dimensional Nanostructures. Angewandte Chemie International Edition 2013, 52, 1982-1985.

Cowell, E. W.; Muir, S. W.; Keszler, D. A.; Wager, J. F., Barrier height estimation of asymmetric metal-insulator-metal tunneling diodes. Journal of Applied Physics 2013, 114, 213703.

Jiang, K.; Meyers, S. T.; Anderson, M. D.; Johnson, D. C.; Keszler, D. A., Functional Ultrathin Films and Nanolaminates from Aqueous Solutions. Chemistry of Materials 2013, 25, 210-214.

Wager, J. F.; Yeh, B.; Hoffman, R. L.; Keszler, D. A., An amorphous oxide semiconductor thin-film transistor route to oxide electronics. Current Opinion in Solid State and Materials Science 2013, 10.1016/j.cossms.2013.07.002.

Wang, W.; Chang, I. Y.; Zakharov, L.; Cheong, P. H.-Y.; Keszler, D. A., [Sc2(μ-OH)2(H2O)6(NO3)2](NO3)2: Aqueous Synthesis and Characterization. Inorganic Chemistry 2013, 52, 1807-1811.

Wang, W.; Liu, W.; Chang, I.-Y.; Wills, L. A.; Zakharov, L. N.; Boettcher, S. W.; Cheong, P. H.-Y.; Fang, C.; Keszler, D. A., Electrolytic synthesis of aqueous aluminum nanoclusters and in situ characterization by femtosecond Raman spectroscopy and computations. Proceedings of the National Academy of Sciences 2013, 110, 18397-18401.

Itthibenchapong, V.; Kokenyesi, R. S.; Ritenour, A. J.; Zakharov, L. N.; Boettcher, S. W.; Wager, J. F.; Keszler, D. A. Earth-Abundant Cu-Based Chalcogenide Semiconductors as Photovoltaic Absorbers. J. Mater. Chem. C 2013, 1, 657.

Cowell, E. W.; Knutson, C. C.; Kuhta, N. A.; Stickle, W.; Keszler, D. A.; Wager, J. F., Engineering anisotropic dielectric response through amorphous laminate structures. Physica Status Solidi a-Applications and Materials Science 2012, 209, 777-784.

Mensinger, Z. L.; Wang, W.; Keszler, D. A.; Johnson, D. W., Oligomeric group 13 hydroxide compounds—a rare but varied class of molecules. Chemical Society Reviews 2012, 41, 1019-1030.

Sundholm, E. S.; Presley, R. E.; Hoshino, K.; Knutson, C. C.; Hoffman, R. L.; Mourey, D. A.; Keszler, D. A.; Wager, J. F., Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc-Tin-Silicon-Oxide Barrier Layer. IEEE Electron Device Letters 2012, 33, 836-838.

Wager, J. F.; Hoshino, K.; Sundholm, E. S.; Presley, R. E.; Ravichandran, R.; Knutson, C. C.; Keszler, D. A.; Hoffman, R. L.; Mourey, D. A.; Robertson, J., A framework for assessing amorphous oxide semiconductor thin-film transistor passivation. Journal of the Society for Information Display 2012, 20, 589-595.

Pelatt, B. D.; Ravichandran, R.; Wager, J. F.; Keszler, D. A. Atomic Solid State Energy Scale. J. Am. Chem. Soc. 2011, 133, 16852–16860.

Yu, L.; Lany, S.; Kykyneshi, R.; Jieratum, V.; Ravichandran, R.; Pelatt, B.; Altschul, E.; Platt, H. a. S.; Wager, J. F.; Keszler, D. A.; et al. Iron Chalcogenide Photovoltaic Absorbers. Adv. Energy Mater. 2011, 1, 748–753.

K. M. Kim, C. W. Kim, J.-S. Heo, H. Na, J. E. Lee, C. B. Park, J.-U. Bae, C.-D. Kim, M. Jun, Y. K. Hwang, S. T. Meyers, A. Grenville, D. A. Keszler, “Competitive Device Performance of Low-Temperature and All-Solution-Processed Metal-Oxide Thin-Film Transistors”, Appl. Phys. Lett. 201199, 242109.